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regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
mar. 2002 23 1 4 type name voltage class 10.5 max 5 1 0.8 4.5 1.3 0.5 3.0 +0.3 ?.5 0 +0.3 ? (1.5) 1.5 max 1.5 max 8.6 0.3 9.8 0.5 2.6 0.4 4.5 ? outline drawing dimensions in mm to-220s 24 1 3 1 2 3 4 t 1 terminal t 2 terminal gate terminal t 2 terminal ? measurement point of case temperature mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type application contactless ac switches , light dimmer, electric flasher unit, hair drier, control of household equipment such as tv sets ?stereo ?refrigerator ?washing machine ?infrared kotatsu ?carpet ?electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications BCR16CS ? t (rms) ...................................................................... 16a ? drm ....................................................................... 600v ? fgt ! , i rgt ! , i rgt # ............................................ 20ma symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =100 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 16 170 121 5 0.5 10 2 ?0 ~ +125 ?0 ~ +125 1.2 ? 1. gate open. refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. case temperature is measured on the t2 terminal. ? 4. the contact thermal resistance r th (c-f) in case of greasing is 1.0 c/w. ? 5. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 8.0a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =25a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 ? 4 t j =125 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 10 max. 2.0 1.5 1.5 1.5 1.5 20 20 20 1.4 performance curves refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 4.40.4 1.2 2.4 3.20.8 1.6 2.0 2.8 3.6 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 125 c t j = 25 c 10 0 23 5710 1 80 60 40 20 23 5710 2 44 100 120 140 160 180 200 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 5
mar. 2002 mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 23 10 2 5710 3 1.6 0 23 10 1 5710 0 23 5710 1 23 5710 2 0.8 0.6 0.4 0.2 1.0 1.2 1.4 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 1 v gd = 0.2v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 4 0 8 0 120 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 4 0 8 0 120 i fgt i, i rgt i i rgt iii 40 30 15 10 5 35 25 20 0 200 24 8 6 1012141618 40 12108 160 120 100 60 20 0 200 80 140 2 4 614 16 18 gate voltage (v) gate current (ma) gate characteristics ( , ? and ?? ) typical example gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a)
mar. 2002 mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 4 0 8 0 120 10 1 14040 40 60 20 0 20 6 0 8 0 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 160 40 0 4 0 8 0 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 160 120 100 60 20 0 3.21.60 0.8 1.2 2.0 2.4 2.8 40 80 140 0.4 40 12108 160 120 100 60 20 0 200 80 140 2 4 614 16 18 60 60 t2.3 100 100 t2.3 120 120 t2.3 160 100 80 40 20 0 14040 40 60 20 0 2 0 6 0 8 0 140 100120 60 120 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are copper and aluminum allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads typical example repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) typical example holding current vs. junction temperature junction temperature ( c) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) laching current vs. junction temperature laching current (ma) junction temperature ( c) t 2 + , g + t 2 , g ? ? ? typical example t 2 + , g typical example distribution typical example breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c )
mar. 2002 mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 10 1 23 10 0 5710 1 23 5710 2 23 7 5 5 3 2 7 7 3 2 10 0 breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
mar. 2002 23 1 4 type name voltage class 10.5 max 5 1 0.8 4.5 1.3 0.5 3.0 +0.3 0.5 0 +0.3 0 (1.5) 1.5 max 1.5 max 8.6 0.3 9.8 0.5 2.6 0.4 4.5 ? outline drawing dimensions in mm to-220s 24 1 3 1 2 3 4 t 1 terminal t 2 terminal gate terminal t 2 terminal ? measurement point of case temperature mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type application contactless ac switches , light dimmer, electric flasher unit, hair drier, control of household equipment such as tv sets stereo refrigerator washing machine infrared kotatsu carpet electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. BCR16CS i t (rms) ...................................................................... 16a v drm ....................................................................... 600v i fgt ! , i rgt ! , i rgt # ............................................ 20ma symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class unit v v maximum ratings 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =125 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 16 170 121 5 0.5 10 2 40 ~ +150 40 ~ +150 1.2 ? 1. gate open. the product guaranteed maximum junction temperature 150 c (see warning.)
mar. 2002 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. case temperature is measured on the t2 terminal. ? 4. the contact thermal resistance r th (c-f) in case of greasing is 1.0 c/w. ? 5. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c/150 c 2. rate of decay of on-state commutating current (di/dt) c = 8.0a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =150 c, v drm applied t c =25 c, i tm =25a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c/150 c, v d =1/2v drm junction to case ? 3 ? 4 t j =125 c/150 c unit ma v v v v ma ma ma v c/w v/ s typ. ! @ # ! @ # electrical characteristics limits min. 0.2/0.1 10/1 max. 2.0 1.5 1.5 1.5 1.5 20 20 20 1.4 performance curves the product guaranteed maximum junction temperature 150 c (see warning.) 10 0 23 5710 1 80 60 40 20 23 5710 2 44 100 120 140 160 180 200 0 0.5 1.0 3.01.5 2.0 2.5 3.5 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 150 c t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 5
mar. 2002 mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 23 10 2 5710 3 1.6 0 23 10 1 5710 0 23 5710 1 23 5710 2 0.8 0.6 0.4 0.2 1.0 1.2 1.4 40 30 15 10 5 35 25 20 0 200 24 8 6 1012141618 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 1 v gd = 0.1v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 160 4 4 40 0 40 80 120 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 160 4 4 40 0 40 80 120 i fgt i, i rgt i i rgt iii 40 12108 160 120 100 60 20 0 200 80 140 2 4 614 16 18 gate voltage (v) gate current (ma) gate characteristics ( , ? and ?? ) typical example gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) typical example gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a)
mar. 2002 mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 160 4 4 40 0 4 0 8 0 120 10 1 160 100 80 40 20 0 14040 40 60 160 20 0 2 0 6 0 8 0 140 100 120 60 120 14016040 40 60 20 0 2 0 6 0 8 0 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 5 3 2 10 2 40 12108 160 120 100 60 20 0 200 80 140 2 4 614 16 18 60 60 t2.3 120 120 t2.3 100 100 t2.3 160 40 0 40 8 0 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 160 120 100 60 20 0 4.02.00 1.0 1.5 2.5 3.0 3.5 40 80 140 0.5 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are copper and aluminum curves apply regardless of conduction angle allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads typical example repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) typical example holding current vs. junction temperature junction temperature ( c) 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) laching current vs. junction temperature laching current (ma) junction temperature ( c) t 2 + , g + t 2 , g ? ? ? typical example t 2 + , g typical example distribution typical example breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c )
mar. 2002 mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 10 2 35710 1 2 3 23 5710 2 7 5 10 1 7 3 2 7 5 10 0 3 2 10 2 35710 1 2 3 23 5710 2 7 5 10 1 7 3 2 7 5 10 0 3 2 breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 150 c i quadrant iii quadrant critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c commutation characteristics (t j = 125 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example t j = 150 c i t = 4a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c commutation characteristics (t j = 150 c) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example
mar. 2002 mitsubishi semiconductor ? triac ? BCR16CS medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) c 1 c 1 = 0.1~0.47 f r 1 = 47~100 ? c 0 = 0.1 f r 0 = 100 ? c 0 r 0 r 1 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v load recommended circuit values around the triac test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits

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